Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization

Laser Assisted Chemical Mechanical Polishing for Planarization

Wafer Scale Variation of Planarization Length in Chemical Mechanical Polishing

Chemical mechanical polishing (CMP) is widely used for pla-narization of advanced interconnect and shallow trench isolation structures in integrated circuit manufacture. Of particular concern is within-die variation in the interlevel dielectric or oxide thickness remaining after polish, due to pattern density variations across the die. 1 Recent modeling of CMP has shown that a " planarization l...

Chemical mechanical polishing of thin film diamond

The demonstration that Nanocrystalline Diamond (NCD) can retain the superior Young’s modulus (1100 GPa) of single crystal diamond twinned with its ability to be grown at low temperatures (<450 C) has driven a revival into the growth and applications of NCD thin films. However, owing to the competitive growth of crystals the resulting film has a roughness that evolves with film thickness, preven...

Direct Measurement of Planarization Length for Copper Chemical Mechanical Planarization Polishing (cmp) Processes Using a Large Pattern Test Mask

We have used a large pattern test mask and a specific arrangement of structures on a wafer for direct measurement of an average planarization length for copper chemical mechanical polishing (CMP) processes. We propose new minimum, maximum, and average planarization length definitions, based on up and down area measurements as a function of trench width. The average planarization length is usefu...

CMOS chip planarization by chemical mechanical polishing for a vertically stacked metal MEMS integration

In this paper we present the planarization process of a CMOS chip for the integration of a microelectromechanical systems (MEMS) metal mirror array. The CMOS chip, which comes from a commercial foundry, has a bumpy passivation layer due to an underlying aluminum interconnect pattern (1.8 μm high), which is used for addressing individual micromirror array elements. To overcome the tendency for t...